JPS622704B2 - - Google Patents

Info

Publication number
JPS622704B2
JPS622704B2 JP54144628A JP14462879A JPS622704B2 JP S622704 B2 JPS622704 B2 JP S622704B2 JP 54144628 A JP54144628 A JP 54144628A JP 14462879 A JP14462879 A JP 14462879A JP S622704 B2 JPS622704 B2 JP S622704B2
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gate
mos
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54144628A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5667962A (en
Inventor
Tooru Kuwabara
Hisayoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14462879A priority Critical patent/JPS5667962A/ja
Publication of JPS5667962A publication Critical patent/JPS5667962A/ja
Publication of JPS622704B2 publication Critical patent/JPS622704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14462879A 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor Granted JPS5667962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14462879A JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14462879A JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Publications (2)

Publication Number Publication Date
JPS5667962A JPS5667962A (en) 1981-06-08
JPS622704B2 true JPS622704B2 (en]) 1987-01-21

Family

ID=15366453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14462879A Granted JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS5667962A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0161983B1 (en) * 1984-05-03 1992-07-01 Digital Equipment Corporation Input protection arrangement for vlsi integrated circuit devices
JPS6161468A (ja) * 1984-08-31 1986-03-29 Seiko Epson Corp 静電気保護回路
JPS6187357A (ja) * 1984-09-18 1986-05-02 Sanyo Electric Co Ltd 半導体集積回路装置
US6191633B1 (en) 1997-09-12 2001-02-20 Nec Corporation Semiconductor integrated circuit with protection circuit against electrostatic discharge

Also Published As

Publication number Publication date
JPS5667962A (en) 1981-06-08

Similar Documents

Publication Publication Date Title
US4086642A (en) Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device
JPH0151070B2 (en])
US4609931A (en) Input protection MOS semiconductor device with zener breakdown mechanism
US4733285A (en) Semiconductor device with input and/or output protective circuit
US4514646A (en) Semiconductor integrated circuit device including a protective resistor arrangement for output transistors
US5811845A (en) Semiconductor apparatus and horizontal register for solid-state image pickup apparatus with protection circuit for bypassing an excess signal
US5710452A (en) Semiconductor device having electrostatic breakdown protection circuit
JPS6146986B2 (en])
US5227327A (en) Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits
JPH0653497A (ja) 入出力保護回路を備えた半導体装置
JPS622704B2 (en])
US4922316A (en) Infant protection device
JP2753191B2 (ja) 半導体装置
JPS6269660A (ja) 静電保護回路
JPS6360547B2 (en])
US5121179A (en) Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits
JPH0379874B2 (en])
JP2671755B2 (ja) 入出力保護回路
JPS58161375A (ja) 絶縁ゲ−ト形電界効果半導体集積回路の入力保護回路
JPS58122695A (ja) 入力過電圧保護回路
US5432369A (en) Input/output protection circuit
JPH04206961A (ja) 半導体装置
JPS6328500B2 (en])
JPH0532908B2 (en])
JPS62279675A (ja) 半導体集積回路の保護回路